Design of a 175 GHZ SiGe-based voltage-controlled oscillator with greater than 7.6 dBm power

<p>In this research, we present a low phase noise (PN) and wide tuning range 175 GHz inductors capacitors (LC) voltage-controlled oscillator (VCO) based on differential Colpitts that was designed using 0.13 μm bipolar complementary metal oxide semiconductor (BiCMOS) simulated. The square of the tank Q-factor oscillation amplitude were both maximized to reduce PN. With an extensive examination parasitic, mathematical analysis load impedances, implementation design, PN reduced, output power enhanced. Using supply voltage 1.6 V, VCO consumes 41.9 mA, resulting in total usage 67 mW prevent undesirable deterioration, inter-stage LC filter at VCO-buffer interface increases swing buffer input. To make better output, is used isolate from core. In addition, has high linearity overall, presented study demonstrates excellent performance potential be applications require high-performance, low-power VCO.</p>